Coupled Defect Level Recombination in the P—N Junction

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Modeling Tunneling-assisted Generation-recombination Rate in Space-charge Region of Pn A-si:h Junction

A theoretical model of generation-recombination mechanism of charge carriers in pn a-Si:H junctions with high internal builtin electric fields is developed in which the capture-emission transitions are treated in a similar way as in the SRH generationrecombination approach. In this way, the effects of the tunneling-assisted transitions between the transport edges and the traps are expressed by ...

متن کامل

Reinventing the PN junction: Dimensionality Effects on Tunneling Switches

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, to republish, to post on servers or to redistribute to lists, requires prior specific permission....

متن کامل

the effect of authentic listening materials on the listening proficiency of efl learners in the intermediate level

having conducted the experiment and analysed the data, the researcher computed the groups mean scores and variances for the test relating to the research question. as the final atep, a t-test was conodonted for the hypothesis. as noted earlier, the significance level was determined at .05 and .01 respectively. the observed t-value was higher than the critical t-value at. 5 and .01 levels. conse...

15 صفحه اول

Spin-orbit effects in a graphene bipolar pn junction

A graphene pn junction is studied theoretically in the presence of both intrinsic and Rashba spin-orbit couplings. We show that a crossover from perfect reflection to perfect transmission is achieved at normal incidence by tuning perpendicular electric field. By further studying angular dependent transmission, we demonstrate that perfect reflection at normal incidence can be clearly distinguish...

متن کامل

A Nanoscale PN Junction in Series with Tunable Schottky Barriers

PN junctions in nanoscale materials are of interest for a range of technologies including photodetectors, solar cells and light-emitting diodes. However, Schottky barriers at the interface between metal contacts and the nanomaterial are often unavoidable. The effect of metalsemiconductor interfaces on the behavior of nanoscale diodes must be understood, both to extract the characteristics of th...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Electrical Engineering

سال: 2011

ISSN: 1335-3632

DOI: 10.2478/v10187-011-0056-5